IRHY53230CM thru-hole equivalent, radiation hardened power mosfet thru-hole.
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Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically .
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.
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